 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMALL-SIGNAL TRANSISTOR 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) DESCRIPTION 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . 0.4 1.6 0.8 0.4 OUTLINE DRAWING Unit 0.5 1.6 1.0 FEATURE Small collector to emitter saturation voltage. VCE(sat)=0.3V max@Ic=100mA,IB=10mA Excellent linearity of DC forward gain. Ultra super mini package for easy mounting 0.7 0.5 For Hybrid IC,small type machine low frequency voltage Amplify application. JEITASC-75A JEDEC- MAXIMUM RATINGSTa=25 Symbol VCBO VCEO VEBO I O TERMINAL CONNECTER Ratings 50 50 6 200 150 150 -55150 Unit V V V mA mW Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature BASE EMITTER COLLECTOR Pc Tj Tstg ELECTRICAL CHARACTERISTICSTa=25 Parameter C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF I C=100A ,R V V V V BE 00.1 APPLICATION 0.55 0.15 Limits Min 50 150 90 Typ 200 2.5 Max 0.1 0.1 800 0.3 15 V MHz pF dB Test conditions = 0.3 Unit V A A CB=50V, I E=0mA EB =6V, I C=0mA =6V, I C=1mA CE CE=6V, I C=0.1mA I C=100mA ,IB=10mA V V V CE=6V, I E=-10mA CB CE =6V, I E=0,f=1MHz =6V, I E=-0.1mA,f=1kHz,RG=2k It shows hFE classification in below table. Item Item 150300 250500 400800 ISAHAYA ELECTRONICS CORPORATION SMALL-SIGNAL TRANSISTOR 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) COMMON EMITTER OUTPUT 50 0.16mA 50 COMMON EMITTER TRANSFER 0.14mA 0.12mA 0.10mA Ta=25 COLLECTOR CURRENT IC(mA) 40 Ta=25 VCE=6V COLLECTOR CURRENT IC(mA) 40 30 0.08mA 20 0.06mA 0.04mA 10 0.02mA IB=0 0 0 1 2 3 4 COLLECTOR EMITTER VOLTAGE VCE(V) 5 30 20 10 0 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 GAIN BAND WIDTH PRODUCT fT(MHz) 250 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25 VCE=6V 200 RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE Ta=25 VCE=6V 100(@IC=1mA) 1000 150 100 100 10 50 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) 0 -0.1 -1 -10 EMITTER CURRENT IE(mA) -100 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) COLLECTOR DISSIPATION Pc (mW) COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 250 Ta=25 IE=0 f=1MHz 10 200 150 100 1 50 0 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) 0 25 50 75 100 125 150 AMBIENT TEMPERTURE Ta () ISAHAYA ELECTRONICS CORPORATION SMALL-SIGNAL TRANSISTOR 2SC5383 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) ISAHAYA ELECTRONICS CORPORATION |
Price & Availability of 2SC5383
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |